Based on the metal-semiconductor junction forming a Schottky barrier, Schottky diodes conduct electricity through majority carriers without minority carrier storage effect. Their core advantages include ultra-low forward voltage drop (0.2–0.45V), extremely fast switching speed (ns level), and low power loss.
When forward-biased, the barrier decreases for rapid electron conduction; when reverse-biased, the barrier increases to control leakage current effectively.
With excellent performance, they are widely used in low-voltage, high-frequency scenarios: rectification and freewheeling in switching power supplies and DC-DC converters to improve efficiency and reduce heat generation; detection and mixing devices in RF circuits, adapting to 5G and microwave communications; also used in PV anti-reverse charging, battery anti-reverse connection, automotive OBC, LED drivers, etc.
In the future, wide-bandgap materials such as SiC and GaN will break through the voltage and temperature bottlenecks of silicon-based devices. SiC Schottky diodes have been widely applied in new energy vehicles and high-voltage PV inverters. As devices evolve toward high voltage, high temperature, and integration, domestic substitution is accelerating, with growing demand in fast charging, data centers, smart grids and other fields—boasting broad market prospects.
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